I-V Characteristics of GaAs/AlAs Asymmetric Spacer Layer Tunnel (ASPAT) using Statistical Diode Validation

Abstract

The Asymmetric Spacer Layer Tunnel Diode (ASPAT) has been physically fabricated and simulated. The ASPAT has an asymmetrical structure, leading to asymmetric current-voltage (I-V) characteristics. These characteristics enable the ASPAT to be a zero-bias detector with low power consumption and high-frequency applications. Therefore, it is crucial to precisely validate the asymmetric data from both experiments and simulations, as these I-V characteristics determine the diode's performance. In this paper, we report on an alternative validation method using statistical analysis. The statistical validation of the I-V characteristics of Gallium Arsenide/Aluminum Arsenide (GaAs/AlAs) Asymmetric Spacer Layer Tunnel Diodes (ASPATs) for both experimental and simulation data is conducted using three approaches: linear regression, non-linear regression, and hypothesis testing of the parameters that define the asymmetrical characteristics graph, specifically the gradient and intercept coefficient. This statistical method is essential for determining the validation percentage for the non-linear current-voltage characteristics of the experimental and simulation data. We assume a significance level of 0.05 (5%) for accepting the validation of I-V characteristics. Our findings show that the I-V performance measurements for both experimental and simulation data are validated within a justified 5% error margin, demonstrating that both measurements are more than 95% validated. These results indicate that the simulation and experimental data are precisely validated, highlighting the excellent design and execution of the fabricated and simulated ASPAT.